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| RO-P-DS-3090 -- Preliminary Information 4.8-6.7 GHz 5W Power Amplifier MAAPGM0060 MAAPGM0060 Features 5 Watt Saturated Output Power Level Variable Drain Voltage (6-10V) Operation GaAS MSAGTM MESFET Process Primary Applications APGM0060 YWWLLLL Point-to-Point Radio SatCom UNII and ISM Band Description The MAAPGM0060 is a 2-stage 5 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction Self-Aligned Gate MESFET Process. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection VDD1 VDD2 RF OUT VDD2 VDD1 Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 25.0 +12.0 -3.0 3 27 180 -55 to +150 Units dBm V V A W C C 1. Operation outside of these ranges may reduce product reliability. RO-P-DS-3090 -- 2/5 4.8-6.7 GHz 5W Power Amplifier Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance Package Base Temperature Symbol VDD VGG PIN TJ JC TB 3.7 Min 6.0 -2.4 Typ 8.0 -1.8 20.0 Max 10.0 -1.5 23.0 150 MAAPGM0060 Unit V V dBm C C/W Note 2 C 2. Maximum Package Base Temperature = 150C -- JC* VDD * IDQ Electrical Characteristics: Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current TB = 40C2, Z0 = 50 , VDD = 8V, IDQ 1.85 A3, Pin = 20 dBm, RG = 100 Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD Typical 4.8-6.7 37 29 37 18 3:1 1.5:1 <4 <2.5 mA A Units GHz dBm % dBm dB 3. Adjust VGG between -2.4 to -1.5 to achieve indicated IDQ. Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. Apply VGG = -1.8 V, VDD= 0 V. Ramp VDD to desired voltage, typically 8 V. Adjust VGG to set IDQ, (approxmately @ -1.8V). Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. 1. 2. 3. 4. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3090 -- 3/5 4.8-6.7 GHz 5W Power Amplifier MAAPGM0060 40 38 36 34 POUT PAE 50 50 40 40 POUT (dBm) P1dB (dBm) 30 28 26 24 22 20 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 PAE(%) 32 30 30 20 VDD = 6 VDD = 8 10 VDD = 10 0 4.5 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 20 dBm Frequency (GHz) Figure 2. 1dB Compression Point vs. Drain Voltage 50 3.0 40 2.5 2.0 POUT (dBm) IDS (A) 30 1.5 5.0 GHz 5.5 GHz 6.5 GHz 20 5.0 GHz 5.5 GHz 1.0 10 6.5 GHz 0.5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 0.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 PIN (dBm) Figure 3. Output Power vs. Input Power at VDD = 8V Input Power (dBm) Figure 4. Drain Current vs. Input Power at VDD = 8V 50 POUT 40 PAE 50 30 Gain Input VSWR 25 Output VSWR 6 40 5 POUT (dBm) Gain (dB) PAE(%) 30 30 20 4 20 20 15 3 10 10 10 2 0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 10.0 5 4.5 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) 1 Drain Voltage (volts) Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 6 GHz Figure 6. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. VSWR RO-P-DS-3090 -- 4/5 4.8-6.7 GHz 5W Power Amplifier MAAPGM0060 APGM0060 YWWLLLL Figure 7. CR-15 Package Dimensions The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3090 -- 5/5 4.8-6.7 GHz 5W Power Amplifier Figure 8. Recommended Bias Configuration 100 VGG 0.1 F MAAPGM0060 100 pF 100 pF 100 pF APGM0060 YWWLLLL RFIN RFOUT V DD2 0.1 F 100 pF 100 pF 100 pF Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection VDD1 VDD2 RF OUT VDD2 VDD1 V DD1 0.1 F This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. * Application Notes can be found by going to the Site Search Page on M/A-COM's web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note. Assembly Instructions: Biasing Notes: The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible (recommended < 100 mils). A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. |
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